STGP10NB60S n-channel 10a - 600v to-220 powermesh ? igbt n high input impedance (voltage driven) n very low on-voltage drop (v cesat ) n high current capability n off losses include tail current description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding perfomances. the suffix "s" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1khz). applications n light dimmer n static relays n motor control ? internal schematic diagram absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr reverse battery protection 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 o c20a i c collector current (continuous) at t c = 100 o c10a i cm ( ) collector current (pulsed) 80 a p tot total dissipation at t c = 25 o c80w derating factor 0.64 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v ces v ce(sat) i c STGP10NB60S 600 v < 1.7 v 10 a june 1999 1 2 3 to-220 1/8
thermal data r thj-case r thj-amb r thc-sink thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ 1.56 62.5 0.2 o c/w o c/w o c/w electrical characteristics (t j = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 m a v ge = 0 600 v v br(ecr) emitter-collector breakdown voltage ic = 1 ma v ge = 0 20 v i ces collector cut-off (v ge = 0) v ce = max rating t j = 25 o c v ce = max rating t j = 125 o c 10 100 m a m a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v v ce = 0 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge i c = 250 m a 2.5 5 v v ce(sat) collector-emitter saturation voltage v ge = 15 v i c = 5 a v ge = 15 v i c = 10 a v ge = 15 v i c = 10 a t j = 125 o c 1.15 1.35 1.25 1.7 v v v dynamic symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25 v i c = 10 a 5 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v f = 1 mhz v ge = 0 610 65 12 780 85 15 pf pf pf q g gate charge v ce = 400 v i c = 10 a v ge = 15 v 33 nc i cl latching current v clamp = 480 v rg=1k w t j = 150 o c 20 a switching on symbol parameter test conditions min. typ. max. unit t d(on) t r delay time rise time v cc = 480 v i c = 10 a v ge = 15 v r g = 1 k w 0.7 0.46 m s m s (di/dt) on e on turn-on current slope turn-on switching losses v cc = 480 v i c = 10 a r g = 1 k w v ge = 15 v t j = 125 o c 8 0.6 a/ m s mj STGP10NB60S 2/8
electrical characteristics (continued) switching off symbol parameter test conditions min. typ. max. unit t c t r (v off ) t f e off (**) cross-over time off voltage rise time fall time turn-off switching loss v cc = 480 v i c = 10 a r ge = 100 w v ge = 15 v 2.2 1.2 1.2 5.0 m s m s m s mj t c t r (v off ) t f e off (**) cross-over time off voltage rise time fall time turn-off switching loss v cc = 480 v i c = 10 a r ge = 100 w v ge = 15 v t j = 125 o c 3.8 1.2 1.9 8.0 m s m s m s mj ( ) pulse width limited by safe operating area ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % (**)losses include also the tail (jedec standardization) thermal impedance STGP10NB60S 3/8
output characteristics transconductance collector-emitter on voltage vs collector current transfer characteristics collector-emitter on voltage vs temperature gate threshold vs temperature STGP10NB60S 4/8
normalized breakdown voltage vs temperature gate charge vs gate-emitter voltage off losses vs temperature capacitance variations off losses vs gate resistance off losses vs collector current STGP10NB60S 5/8
switching off safe operatin area fig. 1: gate charge test circuit fig. 3: test circuit for inductive load switching fig. 2: test circuit for inductive load switching STGP10NB60S 6/8
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STGP10NB60S 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this pu blication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STGP10NB60S 8/8
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